MEMS & Deep Si Etch

MEMS and Deep Silicon Etch

Deep silicon etch is an enabling process for several emerging and evolving technologies. These include micro-electromechanical systems (MEMS) devices, CMOS image sensors, and a host of power devices. In addition, through-silicon vias (TSVs) are being developed for 3-D MEMS and
RF system-in-package (SiP). Many of these technologies are increasingly being used in consumer
applications, such as ink jet printer heads and inertial sensors. This is driving a number of deep silicon etch applications to high-volume manufacturing, which requires the high levels of cost-effective production typically seen in commodity semiconductor memory devices. To achieve high
yield in mass production, the deep silicon etch process requires excellent wafer-to-wafer repeatability, high uptime – including predictable system maintenance intervals and recovery –
and, in some cases, a transition from 150 mm to 200 mm wafers.

TCP^® 9400DSiE™ Deep Silicon Etch System
The TCP 9400DSiE system is based on Lam’s production-proven TCP 9400 silicon etch series with more than 1,600 chambers installed worldwide. The system’s patented high-density TCP plasma source provides an ideal configuration to meet the challenges of silicon deep reactive ion etch
(Si DRIE), offering broad process capability and flexibility for
a wide range of MEMS, advanced packaging, and power device applications. Optimized source and chamber hardware deliver excellent profile control, cross-wafer symmetry, and repeatability, which are important for ensuring high yield in MEMS devices. Incorporation of Lam’s proprietary in situ chamber cleaning technology ensures excellent etch rate stability and high uptime. These proven deep silicon etch capabilities help enable manufacturers to ramp new applications quickly to high-volume production at competitive cost levels.