MEMS and Deep Silicon Etch
Deep silicon etch is an enabling process for several emerging and evolving technologies. These include micro-electromechanical systems (MEMS) devices, CMOS image sensors, and a host of power devices. In addition, through-silicon vias (TSVs) are being developed for 3-D MEMS and
|TCP® 9400DSiE™ Deep Silicon Etch System
The TCP 9400DSiE system is based on Lam’s production-proven TCP 9400 silicon etch series with more than 1,700 chambers installed worldwide. The system’s patented high-density TCP plasma source provides an ideal configuration to meet the challenges of silicon deep reactive ion etch
(Si DRIE), offering broad process capability and flexibility for
a wide range of MEMS, advanced packaging, and power device applications. Optimized source and chamber hardware deliver excellent profile control, cross-wafer symmetry, and repeatability, which are important for ensuring high yield in MEMS devices. Incorporation of Lam’s proprietary in situ chamber cleaning technology ensures excellent etch rate stability and high uptime. These proven deep silicon etch capabilities help enable manufacturers to ramp new applications quickly to high-volume production at competitive cost levels.