3-D IC Etch

The semiconductor industry is developing advanced, three-dimensional integrated circuits (3-D IC) using through-silicon vias (TSVs) to provide interconnect capability for die-to-die and wafer-to-wafer stacking. In addition to a reduced form factor, 3-D ICs can enhance device performance through increased speed and decreased power consumption. Manufacturers are currently considering a wide variety of 3-D integration schemes that present an equally broad range of TSV etch requirements. Plasma etch technology, which has been used extensively for deep silicon etching in memory devices and MEMS production, is well suited for TSV creation. Critical factors for the etch process are the ability to etch a variety of materials within the same chamber (in situ), using both conventional and special techniques for deep silicon etching, while maintaining excellent profile control and across-wafer uniformity.

2300^® Syndion^® Through-Silicon Via Etch System
The 2300 Syndion etch system is based on Lam’s patented TCP technology and the production-proven 2300^® Versys^® Kiyo^® conductor etch system. The Syndion system provides a low-risk, flexible solution to address multiple TSV etch applications, supporting both conventional etching and the Bosch process. Tight and repeatable profile control assures that TSVs can be successfully implemented for a variety of
3-D IC schemes. The Syndion chamber can etch multiple materials in situ – including silicon, dielectrics, and conducting films – thereby addressing multiple TSV etch requirements. This capability reduces capital cost and cycle time for TSV etch by avoiding the need for multiple etch systems. Both 200 mm and 300 mm processing can be performed with the same system, providing for a smooth transition from R&D to volume manufacturing.