Lam's 2300 Etch Series is the low—risk solution for sub—100—nm volume production on 300—mm substrates. The 2300 suite of products brings Lam's tradition of excellence in etch processing to 300—mm wafers with the 2300 Exelan™, the 2300 Versys™ Silicon, and the 2300 Versys™ Metal. The Versys conductor chambers have 200—mm and 300—mm capability. All systems for conductor and dielectric films are available in a four—chamber configuration.

The compact 2300 series design reduces the floor space for high—volume production while still providing full service access. The 2300 etch systems also enable wafer fabs to have one platform independent of their technology roadmap. Lam's 2300 etch series of products lowers the risk of transitioning from 200—mm to 300—mm wafers, changing from aluminum metal etch to Lam's world—class silicon etch for the transition to copper technology, and of moving 300—mm volume production from 150—nm to sub—100—nm technology nodes.

The 2300 Versys conductor etch systems rely on Lam's production—proven Transformer Coupled Plasmaâ"¢ source to support in situ process solutions for leading edge device structures. Both systems deliver superior performance, have large process windows, and process complex film stacks in situ with a single chamber configuration. Lam's 2300 Versys Silicon processes metal gate and STI with top corner rounding in situ. The 2300 Versys Metal provides excellent process results with serial etch and strip on a single platform to control corrosion. The system processes photoresist, hardmask aluminum etch, and tungsten interconnect etch.

Lam's 2300 Versys etch systems reduce cost of ownership to compete with the lowest cost systems in the industry.