2300 Versys® Star™ — Silicon Etch

Lam's 2300 Versys Star silicon etch system extends the 2300 Versys™ silicon etch system's capability to address the challenging needs of sub—90—nm technologies. It incorporates all the benefits of the production—proven 2300 Versys by delivering superior performance on complex film stacks processed in situ while at the same time meeting the requirements for next—generation silicon etch processes to sub—65 nm.

The smaller geometries associated with these advanced technology nodes place stringent conditions on process performance parameters such as CD uniformity, defectivity, and microloading of isolated and dense areas. In addition, the range of silicon etch applications — including metal gate, STI, spacer, and in situ processing capability — requires a large process window.

The 2300 Versys Star provides excellent CD bias uniformity, enabled by the industry's first technologies for tuning gas flows and wafer temperature with step—by—step settings. This allows flexibility in designing the process across the wafer and between steps, leading to a larger process window that can accommodate an extensive variety of applications, wafer types, and film types. For a typical gate etch process, applying these new tuning capabilities reduces CD variation by as much as 50 percent. The 2300 Versys Star includes design features that provide the superior defect performance required for next—generation applications.

Lam's 2300 Versys Star silicon etch system is available as an upgrade to existing 2300 Versys systems. The new system offers the easiest process transition and extendibility from current technologies to future generations without compromising productivity performance.