2300 Versys® Kiyo™ — Conductor Etch

The 2300 Versys Kiyo provides key manufacturing capabilities required for 65 nm and beyond: excellent within wafer, wafer to wafer, and chamber to chamber uniformity and defect control, on a highly reliable wafer transport system designed for 300 mm. With an inherently symmetric chamber and industry—first radial tuning features, the Versys Kiyo produces the uniform etch results required to manufacture advanced devices. By employing proprietary new technology, excellent process repeatability, as well as low defect and metal contamination results, are realized.

Conventional applications associated with silicon etch, such as gate and shallow trench isolation (STI), have increased in complexity as geometries have decreased. The transition to 193 nm resist is essentially complete, and recent challenges include additional mask steps supporting new integration schemes. With the dramatic growth of flash memory devices, requirements of these multi—layer, complex stacks are well supported by the in situ capability of the 2300 Versys Kiyo.

The application suite for the 2300 Versys Kiyo has expanded from the well—known memory gate, logic gate, mask open, and STI to include emerging applications such as high k dielectric removal, critical spacer etch and removal steps, and lithography—enabling etch steps such as CD trim and amorphous carbon removal.

Lam's 2300 Versys Kiyo can be upgraded from the 2300 Versys Star, providing an investment—extending strategy that our customers have grown to expect from Lam etch products. The new system offers the easiest process transition and extendibility from current technologies to future generations without compromising productivity performance.