TCP® 9400DSiE — Deep Silicon Etch

As deep silicon etch transitions into high—volume production, process repeatability, device yield, and system productivity become critical. The TCP® 9400DSiE™has been designed for deep silicon etch and is based on Lam's production—proven TCP 9400 Etch Series with more than 1,300 chambers installed worldwide. The TCP 9400DSiE offers broad process capability and flexibility for a wide range of MEMS, advanced packaging, and power semiconductor applications.

The TCP 9400DSiE silicon etch chamber with patented TCP plasma source provides an ideal configuration to meet the challenges of Si DRIE. The planar source provides exceptionally uniform ion flux without requiring separate source and diffusion chambers, leading to high cross—wafer uniformity of etch rate, profile shape, and critical dimensions (CDs). Lam's unique Waferless AutoClean™ (WAC™) technology offers world—class mean time between cleans (MTBC) by maintaining a consistent chamber environment wafer to wafer. The compact nature of the TCP 9400DSiE allows the cleaning plasma to fill the volume, assuring complete removal of etch polymer depositions. Combined with another proprietary technology that ensures consistent control of the ion energy, the TCP 9400DSiE delivers superior process stability for demanding device requirements.

The 9400DSiE's patented planar TCP plasma source and
compact chamber design provide consistent plasma
delivery across the wafer and wafer to wafer

Benefits of the TCP 9400DSiE include high uniformity of etch results across the wafer, superior repeatability, and reduced defects for higher yields. World—class system uptime delivers the productivity required for high—volume manufacturing.

For more information on Lam's productivity solutions, call 1.510.572.DSiE or send an email message to MEMS@lamresearch.com.