The objective of this course is to provide engineers with an understanding of the basic plasma physics, RF impedance matching, and power deposition mechanisms of capacitively and inductively coupled plasma processing discharges.

This Technical Training Course provides an introduction to the basic features of plasma physics and RF power delivery in semiconductor plasma processing. Capacitively coupled as well as inductively couples plasmas are covered in detail in addition to plasma instabilities.

This course is designed for equipment and process engineers who desire to learn the application of plasma physics for IC processing in Lam’s etch equipment.

• Exposure to the capacitively coupled plasma model, ion energy distribution, frequency effects, and impedance matching.
• Treatment of the inductively couples plasma source, antenna current and voltage with the antenna viewed as a transmission line.
• Understanding of plasma instability issues as related to the coaxial cable length between generator and plasma.

Day 1:

• Review of some basic plasma concepts
• Time-average potentials in an RF plasma
• Review of the "homogeneous plasma" model for capacitively coupled RF plasmas
• Some refinements of the homogeneous model for the sheath regions
• A simple model for capacitive RF voltage division by the sheaths

Day 2:

• Discussion of RF frequency effects on plasma parameters
• Brief overview of negative ion effects
• Impedance matching
• Transmission line theory to provide the foundation for discussion of antenna standing wave effects and cable length effects
• Introduction to inductive RF plasma sources
• Instability/repeatability

There are no prerequisites for taking this course

If you are interested in this course, please contact us for the latest schedule and availability.

Schedule and prices subject to change without notice. Please confirm with Lam.